Memory Cell Based on Crossed Nanowires
نویسندگان
چکیده
The design and calculations of basic characteristics memory cell based on crossed nanowires with different cross-sections are presented. device operation is possible if the transverse dimensions provide dimensional quantization electron energy in working temperature values. In this case, intersecting regions quantum wells for electrons. Tunneling electrons between controlled by applied voltage provides information recording. write rate can reach Pbytes/s =〖10〗^15 bytes/s.
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ژورنال
عنوان ژورنال: Infokommunikacionnye i radioèlektronnye tehnologii
سال: 2023
ISSN: ['2587-9936']
DOI: https://doi.org/10.29039/2587-9936.2023.06.1.04